Silicon-Germanium-Carbon Systems
PAUL SCHERRER INSTITUT

Nanostructured Semiconductors: Si-Ge-C quantum structures

Si-Ge-C quantum structures can be deposited in our institute using either molecular beam epitaxy (MBE) or ultra-high-vacuum chemical-vapor deposition (UHV-CVD). In our lab, both tools are tied together via a plasma processing chamber. In addition a "role on" UHV scanning tunneling microscope (STM) can be attached to the UHV cluster. This unique experimental platform is used in the project for the development of self-organizing growth processes of quantum dots in the material system Si-Ge-C.

Illustrations: click on the pictures for enlarged views

TEM (Superlattice)

Cross sectional Transmission Electron microscopy (TEM) of a Si/SiGe superlattice grown by molecular beam epitaxy

 Photoluminescence Spectra

2.8K Photoluminescence spectrum of a Si/SiGe multiple quantum well structure
Ge dot on Si (111)

Scanning tunneling microscopy (STM)of a (105) facetted Ge hut cluster formed by 5.8 monolayer (ML) of Ge on a Si (100) surface

Photoluminescence Spectrum

2.8K Photoluminescence spectrum of Ge islands embedded in a Si matrix.
C/Ge on Si, STM

STM image of a Si(100) surface after the deposition of 0.1 ML of C and 0.5 ML of Ge, demonstrating the nucleation of C-induced Ge dots.

 Photoluminescence Spectra

Comparison of 2.8K PL spectra of SiGe quantum wells and C-induced Ge dots showing the enhanced luminescence of the quantum dot structures

 

Collaborations

  • Prof. Dr. K. Kern, Max Planck Institut für Festkörperforschung, MPI Stuttgart, Germany
  • Prof. K. Ensslin, Laboratory for Solid State Physics, ETH Zürich
  • Prof. Dr. G. Bauer, Institut für Halbleiterphysik, Johannes Keppler Universität, Linz, Austria
  • Prof. Dr. J. Derrien, CRMC2, CNRS, Marseille, France
  • Prof. Dr. M. Berti, INFM, University of Genova, Italy
  • Prof. Dr. P. Kelires, FORTH, University of Heraklion, Crete
  • Dr. K. Eberl, Max Planck Institut für Festkörperforschung, MPI Stuttgart, Germany
  • PD Dr. A. Dommann, Institut für Vakuumtechnik, Neutechnikum Buchs
  • Dr. B. Müller, ETH-BWB, ETH Zürich, Wagistr. 23, CH-8952 Schlieren

 

Projects:

  • SiGeC Nanostructures : a new path to Si-based optoelectronics (SiGe Net)
  • Ge quantum dot formation on modified Si surfaces
    Swiss National Science Foundation
  • Electro-optic effects in nano-crystalline Si and column IV alloys
    Swiss National Science Foundation
  • Energieaufgelöste Reflexionselektronenbeugung (ELS-RHEED)
    Swiss National Science Foundation

Publications

  • O. Leifeld, A. Beyer, E. Müller, K. Kern, D. Grützmacher
    Formation and ordering effects of c-induced Ge dots grown on Si (001) by molecular beam epitaxy
    Materials Science and Engineering B74, 222 (2000)
  • E. Müller, R. Hartmann, and D. Grützmacher
    TEM study of an anti-correlation relation in corrugated layers of Si1-xGex(C)/Si superlattices
    Proc. of 11th Int. Conf. on Microscopy of Semiconducting Materials, 22-25 March 1999, University of Oxford, Vol. 164, p.227 (1999)
  • D. Grützmacher, R. Hartmann, O. Leifeld, U. Gennser, C. David, E. Müller, J.-C. Panitz
    Optical properties of Si-Ge-C nanostructures deposited by MBE
    Part of the SPIE Conferences on Silicon-based Optoelectronics, San Jose, California, January 1999, SPIE Vol. 3630, p. 171 (1999)
  • C. David, R. Hartmann, E. Müller, U. Gennser and D. Grützmacher
    Pre-structuring of Si substrates to investigate MBE growth of SiGe layers
    Microelectronic Engineering 46, 275 (1999)
  • O. Leifeld, R. Hartmann, E. Müller, B. Müller, K. Kern and D. Grützmacher
    Self organized growth of Ge quantum dots on Si [100] substrates induced by sub-monolayer C coverages
    Nanotechnology, 10, 122 (1999)
  • O. Leifeld, E. Müller, D. Grützmacher, B. Müller, K. Kern
    In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si[100]
    Applied Physics Letters 74. 994 (1999)
  • O. Leifeld, D. Grützmacher, B. Müller, K. Kern, E. Kaxiras, P.C. Kelires.
    Dimer Pairing on the C-Alloyed Si(001) Surface
    Physical Review Letters 82, 972 (1999)
  • R. Hartmann, U. Gennser, H. Sigg, D. Grützmacher, G. Dehlinger
    Si/SiGeC Heterostructures: A Path Towards High Mobility Channels
    Future Trends in Microelectronics: The Road Ahead, ed.: S. Luryi, J. Xu, and A. Zaslavsky, ISBN 0-471-32183-4, John Wiley & Sons, Inc, p. 133 (1999)
  • E. Müller, R. Hartmann, C. David, D. Grützmacher
    Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy
    Thin Solid Films 336, 92 (1998)
  • O. Leifeld, D. Grützmacher, B. Müller, K.Kern
    Ge-quantum dots on Si (001) tailored by Carbon predeposition
    Mat. Res. Soc. Symp. Proc. Vol. 533, 183 (1998)
  • R. Hartmann, U. Gennser, D. Grützmacher, H. Sigg, E. Müller, K. Ensslin
    Photoluminescence in strain compensated Si/SiGeC Multiple Quantum Wells
    Mat. Res. Soc. Symp. Proc. Vol. 533, 251 (1998)
  • R. Hartmann, U. Gennser, H. Sigg, and D. Grützmacher, K. Ensslin
    Band gap and band alignment of strain reduced Si/Si1–x–yGexCy multiple quantum well structures obtained by photoluminescence measurements
    Applied Physics Letters 73, 1257, (1998)
  • R. Hartmann, D. Grützmacher; E. Mueller; U. Gennser; A. Dommann; P. Schroeter; P. Warren
    Growth of Si1-yCy/Si- and Si1-x-yGexCy/Si-multiple quantum wells using molecular beam epitaxy
    Thin-Solid-Films 318, 158 (1998)
  • D. Grützmacher, R. Hartmann, P. Schnappauf, U. Gennser, E. Müller, D. Bächle, A. Dommann,
    Low temperature Molecularbeam epitaxy of SiGeC/Si quantum well structures: electrical and optical properties,
    Thin Solid Films, 321, 26 (1998)
  • O. Leifeld, B. Müller, D.A. Grützmacher, K. Kern
    An UHV-STM for in-situ characterization of MBE/CVD growth on 4-inch wafers
    Appl. Phys. A 66, 993 (1998)
Last update: 23.07.07 cp

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